Complete Monte Carlo RF analysis of "real" short-channel compound FET's
نویسندگان
چکیده
منابع مشابه
Complete Monte Carlo RF Analysis of “Real” Short-Channel Compound FET’s
A comprehensive RF analysis technique based on ensemble Monte Carlo (EMC) simulation of compound FET’s with realistic device geometry is presented. Y -parameters are obtained through Fourier transformation of the EMC transients in response to small changes in the terminal voltages. The terminal currents are statistically enhanced and filtered to allow for reliable y-parameters extraction. Impro...
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ژورنال
عنوان ژورنال: IEEE Transactions on Electron Devices
سال: 1998
ISSN: 0018-9383
DOI: 10.1109/16.704358